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SIHP33N60E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
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Inventory: 21
Minimum: 1
Total Price: USD $1.38
Unit Price: USD $1.381566
≥1 USD $1.381566
≥10 USD $1.340931
≥100 USD $1.300297
≥500 USD $1.249504

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.099Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 88A

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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