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RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 38.8A TO-3P(N)
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Inventory: 208
Minimum: 1
Total Price: USD $10.48
Unit Price: USD $10.47816
≥1 USD $10.47816
≥10 USD $8.365157
≥100 USD $7.484492
≥500 USD $6.603957
≥1000 USD $5.943565

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Capacitance 4.1nF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 270W Tc
Element Configuration Single
Power Dissipation 270W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Current - Continuous Drain (Id) @ 25°C 38.8A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 38.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 4.1nF
FET Feature Super Junction
Drain to Source Resistance 55mOhm
Rds On Max 65 mΩ

Compliance

RoHS Status RoHS Compliant
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