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NTTFS4824NTAG

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET U8FL 30V 69A 7.5mOhm
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Inventory: 2267
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.871815
≥1 USD $0.871815
≥10 USD $0.715208
≥100 USD $0.693263
≥500 USD $0.67032
≥1000 USD $0.648375
≥3000 USD $0.581543

Technical Details

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 660mW Ta 46.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.1W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2363pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 69A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 11.5V
Rise Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 20.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 69A
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 255 pF

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Alternative Model

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