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RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 12V 1.3A WEMT6
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Inventory: 8418
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.37884
≥1 USD $0.37884
≥10 USD $0.321552
≥100 USD $0.223238
≥500 USD $0.174285
≥1000 USD $0.141668
≥3000 USD $0.126644

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 6V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 1.3A
Drain-source On Resistance-Max 0.26Ohm
DS Breakdown Voltage-Min 12V
FET Feature Schottky Diode (Isolated)
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