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SIHD6N62ET1-GE3

Vishay Siliconix
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 620V 6A TO252AA
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 2.507mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 78W Tc
Power Dissipation 78W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 578pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drain to Source Voltage (Vdss) 620V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 780mOhm

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