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SI8425DB-T1-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 4-UFBGA, WLCSP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET -20V [email protected] 9.3A P-Ch G-III
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Inventory: 53546
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 21 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 23mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 1.1W Ta 2.7W Tc
Element Configuration Single
Power Dissipation 2.7W
Turn On Delay Time 50 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 600 ns
Continuous Drain Current (ID) 9.3A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -20V

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, WLCSP
Number of Pins 4

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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