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RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 8-MLP
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Inventory: 2100
Minimum: 1
Total Price: USD $0.84
Unit Price: USD $0.84084
≥1 USD $0.84084
≥10 USD $0.692076
≥100 USD $0.537953
≥500 USD $0.455994
≥1000 USD $0.371457

Technical Details

Supply Chain

Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.3W Ta 29W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 13.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs 1.9 V

Dimensions

Height 750μm
Length 3.3mm
Width 3.3mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 200mg
Transistor Element Material SILICON
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