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NTD4858NT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 11.2A DPAK
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Inventory: 7462
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.563588
≥1 USD $0.563588
≥10 USD $0.46284
≥100 USD $0.447878
≥500 USD $0.433913
≥1000 USD $0.41895
≥3000 USD $0.376058

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6.2MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.3W Ta 54.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 12.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1563pF @ 12V
Current - Continuous Drain (Id) @ 25°C 11.2A Ta 73A Tc
Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 4.5V
Rise Time 17.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 23.8 ns
Continuous Drain Current (ID) 13.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 73A
Drain to Source Breakdown Voltage 25V

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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