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SI8808DB-T2-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 4-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V MICROFOOT
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Inventory: 1152
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.10111
≥1 USD $0.10111
≥10 USD $0.098136
≥100 USD $0.095162
≥500 USD $0.091445

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Reach Compliance Code unknown
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 30V

Compliance

RoHS Status ROHS3 Compliant
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