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DMN3730UFB-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-UFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 750MA DFN
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Inventory: 4252
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504
≥10 USD $0.366828
≥100 USD $0.254747
≥500 USD $0.198918
≥1000 USD $0.161681

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 690mW
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 2.8 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 910mA
Threshold Voltage 450mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.46Ohm
Drain to Source Breakdown Voltage 30V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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