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SIA459EDJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 20V 7.4A 6-Pin PowerPAK SC-70 T/R
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Inventory: 11638
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.111314
≥1 USD $0.111314
≥10 USD $0.10804
≥100 USD $0.104766
≥500 USD $0.100673

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 28mOhm
Terminal Finish Matte Tin (Sn) - annealed
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.9W Ta 15.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 885pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 25 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 40A

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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