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CSD17318Q2

Texas Instruments
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 30V N CH MOSFET
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Inventory: 10783
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.059904
≥1 USD $0.059904
≥10 USD $0.058142
≥100 USD $0.05638
≥500 USD $0.054178

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17318
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 16W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.1m Ω @ 8A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 879pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 8V
Vgs (Max) ±10V
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 7.7 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 800μm
Length 2mm
Width 2mm
Thickness 750μm

Compliance

RoHS Status ROHS3 Compliant

Physical

Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Alternative Model

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