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SI3421DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SI3421DV-T1-GE3. MOSFET, P CHANNEL, -30V, -8A, TSOP-6
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Inventory: 1990
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.118756
≥1 USD $0.118756
≥10 USD $0.115263
≥100 USD $0.111771
≥500 USD $0.107405

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SI3421
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 4.2W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.2m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2580pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -3V
JEDEC-95 Code MO-193AA
Gate to Source Voltage (Vgs) -20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.0192Ohm
DS Breakdown Voltage-Min 30V

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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