Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series U-MOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code unknown
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 37.6nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±6V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 30A