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SI3476DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description In a Pack of 25, N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
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Inventory: 43040
Minimum: 1
Total Price: USD $2.03
Unit Price: USD $2.032905
≥1 USD $2.032905
≥10 USD $1.66782
≥100 USD $1.61595
≥500 USD $1.56408
≥1000 USD $1.511213

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 93m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 40V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.093Ohm
Drain to Source Breakdown Voltage 80V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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