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RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 0.9A 6-TSOP
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Inventory: 197720
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.36708
≥1 USD $0.36708
≥10 USD $0.301245
≥100 USD $0.29127
≥500 USD $0.282293
≥1000 USD $0.273315
≥1200 USD $0.244388

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Dimensions

Height 900μm
Length 2.9972mm
Width 1.4986mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.2Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 900mA
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 540mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Rise Time 1.6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 7.5 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 7A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 9.5 mJ
Nominal Vgs 5.5 V

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
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