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DMP4051LK3-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 7.2A DPAK
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Inventory: 31179
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.53592
≥1 USD $0.53592
≥10 USD $0.45738
≥100 USD $0.318133
≥500 USD $0.248371
≥1000 USD $0.201875

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 51mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.14W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.18W
Case Connection DRAIN
Turn On Delay Time 2.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 51m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 674pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 14.1 ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.3 ns
Turn-Off Delay Time 25.1 ns
Continuous Drain Current (ID) -7.2A
Threshold Voltage -3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 28.9A
Max Junction Temperature (Tj) 150°C

Dimensions

Height 2.52mm
Length 6.7mm
Width 6.2mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Alternative Model

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