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FQD5P10TM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description P-channel Power Mosfet, Qfet?, -100 V, -3.6 A, 1.05 ?, Dpak
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Inventory: 2083
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.21936
≥1 USD $0.21936
≥10 USD $0.212908
≥100 USD $0.206456
≥500 USD $0.198392

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.6A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 100V
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Current 36A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Avalanche Energy Rating (Eas) 55 mJ

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