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TPN4R806PL,L1Q

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description X35 PB-F POWER MOSFET TRANSISTOR
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Inventory: 12662
Minimum: 1
Total Price: USD $0.78
Unit Price: USD $0.77616
≥1 USD $0.77616
≥10 USD $0.63294
≥100 USD $0.492492
≥500 USD $0.417463
≥1000 USD $0.340069
≥3000 USD $0.320139

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN

Technical

Operating Temperature 175°C
Packaging Tape & Reel (TR)
Series U-MOSIX-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 630mW Ta 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 30V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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