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CSD16410Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description the nexfet power mosfet has been designed to minimize losses in power conversion applications.
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Inventory: 2597
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.81312
≥1 USD $0.81312
≥10 USD $0.70686
≥100 USD $0.48935
≥500 USD $0.408851
≥1000 USD $0.34796

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16410
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 6.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 16A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 10.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 52 pF

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

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