Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6.3Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 1.8A
JESD-30 Code R-PSSO-G2
Nominal Vgs 5 V
Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 7.2A
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 3V
Continuous Drain Current (ID) 1.8A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 30 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 6.3 Ω @ 900mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 50W Tc
Number of Channels 1
Number of Elements 1