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SI7326DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 10A 3.5W 19.5mohm @ 10V
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Inventory: 982
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.090763
≥1 USD $0.090763
≥10 USD $0.088094
≥100 USD $0.085424
≥500 USD $0.082087

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs 1.8 V

Dimensions

Height 1.04mm
Length 3.3mm
Width 3.3mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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