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NVF6P02T3G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET POWER MOSFET
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Inventory: 6275
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.12728
≥1 USD $1.12728
≥10 USD $0.925848
≥100 USD $0.719796
≥500 USD $0.610154
≥1000 USD $0.497029
≥3000 USD $0.467895

Technical Details

Supply Chain

Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 8.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 8.3W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 16V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage -25V
Pulsed Drain Current-Max (IDM) 35A

Dimensions

Height 1.65mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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