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SI3477DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET -12V [email protected] 8A P-Ch G-III
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Inventory: 29232
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.03812
≥1 USD $0.03812
≥10 USD $0.036999
≥100 USD $0.035878
≥500 USD $0.034477

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 17.5mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 4.2W Tc
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 17.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 6V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -12V
Input Capacitance 2.6nF
Drain to Source Resistance 17.5mOhm
Rds On Max 17.5 mΩ
Nominal Vgs -400 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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