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SI7772DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SI7772DP-T1-GE3 MOSFET Transistor, N Channel, 35.6 A, 30 V, 0.0105 ohm, 10 V, 2.5 V
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Inventory: 6002
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.72072
≥1 USD $0.72072
≥10 USD $0.621852
≥100 USD $0.430492
≥500 USD $0.359676
≥1000 USD $0.306102

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series SkyFET?, TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 13MOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.9W Ta 29.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1084pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35.6A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 35.6A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 50A
Nominal Vgs 2.5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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