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PSMN130-200D,118

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description NEXPERIA - PSMN130-200D,118 - MOSFET, N CH, 200V, 20A, SOT428
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Inventory: 6862
Minimum: 1
Total Price: USD $23.3
Unit Price: USD $23.303595
≥1 USD $23.303595
≥10 USD $19.121078
≥100 USD $18.523575
≥500 USD $17.926073
≥1000 USD $17.32857

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON

Dimensions

Height 2.38mm
Length 6.35mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS?
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 130MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 46 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 252 mJ

Alternative Model

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