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IPN80R600P7ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description COOLMOS P7 800V SOT-223
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Inventory: 83
Minimum: 1
Total Price: USD $2.58
Unit Price: USD $2.582288
≥1 USD $2.582288
≥10 USD $2.460042
≥100 USD $2.387243

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-261-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 7.4W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 500V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 800V

Compliance

RoHS Status ROHS3 Compliant
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