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IRFH5053TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 9.3A PQFN56
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Inventory: 9158
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.300234
≥1 USD $0.300234
≥10 USD $0.291404
≥100 USD $0.282574
≥500 USD $0.271536

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 8.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9.3A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 14.6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.9 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 9.3mA
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.3A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 75A
Nominal Vgs 3.7 V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 939.8μm
Length 5.9944mm
Width 5mm

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