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IPD65R650CEATMA1

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 10.1A TO252
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Inventory: 340207
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.501743
≥1 USD $0.501743
≥10 USD $0.411968
≥100 USD $0.399
≥500 USD $0.386033
≥1000 USD $0.374063

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series CoolMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 86W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 0.21mA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.1A
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 650V
FET Feature Super Junction

Alternative Model

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