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IPL65R420E6AUMA1

Infineon Technologies
RoHS
/
Package 4-PowerTSFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 4VSON
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS? E6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.1A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.1A
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 215 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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