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APT80SM120B

Microsemi Corporation
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description POWER MOSFET - SIC
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Inventory: 1006
Minimum: 1
Total Price: USD $17.36
Unit Price: USD $17.358854
≥1 USD $17.358854
≥10 USD $16.848299
≥100 USD $16.337745
≥500 USD $15.699551

Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 555W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 80A

Alternative Model

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