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APT70SM70B

Microsemi Corporation
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description POWER MOSFET - SIC
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Inventory: 1410
Minimum: 1
Total Price: USD $14.47
Unit Price: USD $14.465711
≥1 USD $14.465711
≥10 USD $14.040249
≥100 USD $13.614787
≥500 USD $13.08296

Technical Details

Supply Chain

Factory Lead Time 22 Weeks
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 32.5A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 20V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 65A
Drain Current-Max (Abs) (ID) 58A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 137A
DS Breakdown Voltage-Min 700V

Alternative Model

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