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NVTFS5820NLTAG

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET Single N-Channel 60V,29A,11.5mohm
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Inventory: 3533
Minimum: 1
Total Price: USD $14.52
Unit Price: USD $14.516618
≥1 USD $14.516618
≥10 USD $11.911148
≥100 USD $11.53908
≥500 USD $11.166015
≥1000 USD $10.793948
≥3000 USD $9.677745

Technical Details

Supply Chain

Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 15 hours ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.2W Ta 21W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 21W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1462pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 29A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 247A

Physical

Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 750μm
Length 3.15mm
Width 3.15mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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