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TPH3202LD

Transphorm
RoHS
/
Package 4-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GANFET N-CH 600V 9A PQFN
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case 4-PowerDFN

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Gallium Nitride)
Reach Compliance Code unknown
Power Dissipation-Max 65W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350m Ω @ 5.5A, 8V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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