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Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH DFN
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.1W Ta 36W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
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