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Transistors - FETs, MOSFETs - Single
2SJ668(TE16L1,NQ)

2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package TO-252-3, DPak (2 Leads + Tab), SC-63

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description TOSHIBA - 2SJ668(TE16L1,NQ) - MOSFET, P-KANAL, 5A, 60V, DPAK

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Pricing & Ordering

Inventory: 2623

Minimum: 1

Total Price: USD $1.09

Unit Price: USD $1.08927

≥1 USD $1.08927

≥10 USD $0.89376

≥100 USD $0.86583

≥500 USD $0.8379

≥1000 USD $0.80997

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins 3

Technical

Operating Temperature 150°C

Packaging Tape & Reel (TR)

Published 2010

Series U-MOSIII

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Termination SMD/SMT

Technology MOSFET (Metal Oxide)

Number of Elements 1

Power Dissipation-Max 20W Tc

Power Dissipation 20W

FET Type P-Channel

Rds On (Max) @ Id, Vgs 170m Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id 2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V

Current - Continuous Drain (Id) @ 25°C 5A Ta

Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V

Rise Time 14ns

Drive Voltage (Max Rds On,Min Rds On) 4V 10V

Vgs (Max) ±20V

Fall Time (Typ) 14 ns

Continuous Drain Current (ID) 5A

Threshold Voltage 2V

Gate to Source Voltage (Vgs) 20V

Dual Supply Voltage 60V

Nominal Vgs 2 V

Compliance

Radiation Hardening No

REACH SVHC Unknown

RoHS Status RoHS Compliant

Lead Free Lead Free

Alternative Model

Microsemi Corporation

Infineon Technologies

Microsemi Corporation

Infineon Technologies

Taiwan Semiconductor Corporation

Nexperia USA Inc.

Broadcom Limited

Rochester Electronics, LLC

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