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ITD50N04S4L04ATMA1

Infineon Technologies
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH TO252-5
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Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G4
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 210 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
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