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SI4712DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 14.6A 8SOIC
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Inventory: 16148
Minimum: 1
Total Price: USD $0.45
Unit Price: USD $0.447878
≥1 USD $0.447878
≥10 USD $0.36708
≥100 USD $0.356108
≥500 USD $0.344138
≥1000 USD $0.333165

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series SkyFET?, TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 5W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1084pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.6A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 14.6A
Gate to Source Voltage (Vgs) 2.5V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.5 V

Alternative Model

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