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JANSR2N7380

Microsemi Corporation
RoHS
/
Package TO-257-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N CHANNEL MOSFET TO-257 RAD
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-257-3
Supplier Device Package TO-257

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 1997
Series Military, MIL-PRF-19500/614
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta 75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 14.4A, 12V
Vgs(th) (Max) @ Id 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 12V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±20V

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