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DMS2085LSD-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
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Inventory: 32550
Minimum: 1
Total Price: USD $1.65
Unit Price: USD $1.650863
≥1 USD $1.650863
≥10 USD $1.354605
≥100 USD $1.31271
≥500 USD $1.269818
≥1000 USD $1.227923

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Turn On Delay Time 3.3 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 353pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status ROHS3 Compliant
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