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NVD5890NLT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 40V T2 DPAK USR GRESHAM F
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Inventory: 6401
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.435908
≥1 USD $0.435908
≥10 USD $0.358103
≥100 USD $0.346133
≥500 USD $0.33516
≥1000 USD $0.324188

Technical Details

Supply Chain

Lifecycle Status LIFETIME (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Ta 123A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 123A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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