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Transistors - FETs, MOSFETs - Single
PSMN8R9-100BSEJ

PSMN8R9-100BSEJ

Nexperia USA Inc.

RoHS

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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description PSMN8R9-100BSE/SOT404/D2PAK

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technical

Operating Temperature 175°C TJ

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 296W

FET Type N-Channel

Input Capacitance (Ciss) (Max) @ Vds 7.11nF @ 10V

Current - Continuous Drain (Id) @ 25°C 108A

Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V

Drain to Source Voltage (Vdss) 100V

Alternative Model

Rochester Electronics, LLC

VS-15ETL06-1PBF

Vishay Semiconductor Diodes Division

Diodes Incorporated

Vishay Semiconductor Diodes Division

Micro Commercial Co

Taiwan Semiconductor Corporation

BLA1011-200,112

Ampleon USA Inc.

Semtech Corporation

Microsemi Corporation

Littelfuse Inc.

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