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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V TO-220
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3

Technical

Operating Temperature -55°C~175°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 268W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 30V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
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