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NP110N055PUJ-E1B-AY

Renesas Electronics America
RoHS
RoHS RoHS compliant
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRANSISTOR
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Inventory: 1086
Minimum: 1
Total Price: USD $5.53
Unit Price: USD $5.52552
≥1 USD $5.52552

Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 110A
Drain-source On Resistance-Max 0.0024Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 435 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 288W

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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