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SI1072X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V SC89
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Inventory: 12376
Minimum: 1
Total Price: USD $10.16
Unit Price: USD $10.161533
≥1 USD $10.161533
≥10 USD $8.338103
≥100 USD $8.076758
≥500 USD $7.81641
≥1000 USD $7.556063

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 93m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.093Ohm
DS Breakdown Voltage-Min 30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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