Operating Temperature -50°C~150°C TJ
Packaging Tube
Published 2010
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
Element Configuration Single
Power Dissipation 63W
Turn On Delay Time 9.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 21A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 4.5V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Recovery Time 53 ns
Nominal Vgs 800 mV