Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.1W
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 653pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.9A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 19ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 5.4 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 653pF
Recovery Time 17 ns
Drain to Source Resistance 13mOhm
Rds On Max 13 mΩ
Nominal Vgs 1.8 V