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AUIRFSL4310

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-262 Tube
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Inventory: 9670
Minimum: 1
Total Price: USD $6.97
Unit Price: USD $6.967538
≥1 USD $6.967538
≥10 USD $5.716673
≥100 USD $5.53812
≥500 USD $5.359568
≥1000 USD $5.181015

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 110 ns
Fall Time (Typ) 78 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 550A
Avalanche Energy Rating (Eas) 980 mJ

Dimensions

Height 9.65mm
Length 10.67mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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