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SI2331DS-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 12V 3.2A SOT23-3
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Inventory: 2359
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.049012
≥1 USD $0.049012
≥10 USD $0.04757
≥100 USD $0.046129
≥500 USD $0.044327

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 710mW Ta
Element Configuration Single
Power Dissipation 710mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 48mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Input Capacitance 780pF
Drain to Source Resistance 48mOhm
Rds On Max 48 mΩ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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