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SI3867DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 5.1A 2.0W 51mohm @ 4.5V
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Inventory: 49082
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.871815
≥1 USD $0.871815
≥10 USD $0.715208
≥100 USD $0.693263
≥500 USD $0.67032
≥1000 USD $0.648375

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 51m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) -5.1A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.9A
Drain-source On Resistance-Max 0.051Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs -1.4 V

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